000			05134nam a2200937 i 4500
001			7794169
003			IEEE
005			20230927112359.0
006			m o d
007			cr |n|||||||||
008			170118s2017 nju ob 001 eng d
020			_a9781119079415 _qelectronic bk.
020			_z9781119009740 _qprint
020			_z1119079411 _qelectronic bk.
020			_z9781119079354 _qelectronic bk.
020			_z1119079357 _qelectronic bk.
024	7		_a10.1002/9781119079415 _2doi
035			_a(CaBNVSL)mat07794169
035			_a(IDAMS)0b000064859d933b
040			_aCaBNVSL _beng _erda _cCaBNVSL _dCaBNVSL
082	0	4	_a004.5/3
245	0	0	_aIntroduction to magnetic random-access memory / _cedited by Bernard Dieny, Ronald B. Goldfarb, Kyung-Jin Lee.
264		1	_aHoboken, New Jersey : _bWiley-IEEE Press, _c[2017]
264		2	_a[Piscataqay, New Jersey] : _bIEEE Xplore, _c[2017]
300			_a1 PDF (264 pages).
336			_atext _2rdacontent
337			_aelectronic _2isbdmedia
338			_aonline resource _2rdacarrier
504			_aIncludes bibliographical references and index.
505	0		_aBasic Spintronic Transport Phenomena / Nicolas Locatelli, Vincent Cros -- Magnetic Properties of Materials for MRAM / Shinji Yuasa -- Micromagnetism Applied to Magnetic Nanostructures / Liliana D Buda-Prejbeanu -- Magnetization Dynamics / William E Bailey -- Magnetic Random-Access Memory / Bernard Dieny, I Lucian Prejbeanu -- Magnetic Back-End Technology / Michael C Gaidis -- Beyond MRAM: Nonvolatile Logic-in-Memory VLSI / Takahiro Hanyu, Tetsuo Endoh, Shoji Ikeda, Tadahiko Sugibayashi, Naoki Kasai, Daisuke Suzuki, Masanori Natsui, Hiroki Koike, Hideo Ohno -- Appendix: Units for Magnetic Properties.
506	1		_aRestricted to subscribers or individual electronic text purchasers.
520			_aMagnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, low energy dissipation, fast switching speed, radiation hardness, and durability. Although toggle-MRAM is currently a commercial product, it is clear that future developments in MRAM will be based on spin-transfer torque, which makes use of electrons' spin angular momentum instead of their charge. MRAM will require an amalgamation of magnetics and microelectronics technologies. However, researchers and developers in magnetics and in microelectronics attend different technical conferences, publish in different journals, use different tools, and have different backgrounds in condensed-matter physics, electrical engineering, and materials science. This book is an introduction to MRAM for microelectronics engineers written by specialists in magnetic materials and devices. It presents the basic phenomena involved in MRAM, the materials and film stacks being used, the basic principles of the various types of MRAM (toggle and spin-transfer torque; magnetized in-plane or perpendicular-to-plane), the back-end magnetic technology, and recent developments toward logic-in-memory architectures. It helps bridge the cultural gap between the microelectronics and magnetics communities.
530			_aAlso available in print.
538			_aMode of access: World Wide Web
588			_aOnline resource; title from PDF title page (John Wiley, viewed December 13, 2016).
650		0	_aRandom access memory.
650		0	_aMagnetic memory (Computers)
650		7	_aMagnetic memory (Computers) _2fast
650		7	_aRandom access memory. _2fast
655		4	_aElectronic books.
695			_aAmorphous magnetic materials
695			_aCMOS technology
695			_aComputer architecture
695			_aDamping
695			_aDemagnetization
695			_aFabrication
695			_aMagnetic domain walls
695			_aMagnetic domains
695			_aMagnetic hysteresis
695			_aMagnetic materials
695			_aMagnetic moments
695			_aMagnetic multilayers
695			_aMagnetic recording
695			_aMagnetic resonance imaging
695			_aMagnetic tunneling
695			_aMagnetization
695			_aMagnetomechanical effects
695			_aMagnetostatics
695			_aMemory management
695			_aMetals
695			_aNonvolatile memory
695			_aPerpendicular magnetic anisotropy
695			_aPower supplies
695			_aRandom access memory
695			_aSaturation magnetization
695			_aSilicon
695			_aStandards
695			_aSwitches
695			_aTorque
695			_aTransistors
695			_aVery large scale integration
695			_aWiring
700	1		_aDieny, B. _q(Bernard), _eeditor.
700	1		_aGoldfarb, Ronald Barry, _eeditor.
700	1		_aLee, Kyung-Jin, _eeditor.
710	2		_aIEEE Xplore (Online Service), _edistributor.
710	2		_aWiley, _epublisher.
776	0	8	_iPrint version: _z9781119009740
856	4	2	_3Abstract with links to resource _uhttps://ieeexplore.ieee.org/xpl/bkabstractplus.jsp?bkn=7794169
999			_c40749 _d40749