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Junctionless Field-Effect Transistors : (Record no. 40865)

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000 -LEADER
fixed length control field	08583nam a2200589 i 4500
001 - CONTROL NUMBER
control field	8671409
003 - CONTROL NUMBER IDENTIFIER
control field	IEEE
005 - DATE AND TIME OF LATEST TRANSACTION
control field	20230927112401.0
006 - FIXED-LENGTH DATA ELEMENTS--ADDITIONAL MATERIAL CHARACTERISTICS
fixed length control field	m o d
007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION
fixed length control field	cr \|n\|\|\|\|\|\|\|\|\|
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field	190417s2019 mau ob 001 eng d
019 ## -
--	1083713890
--	1085699194
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number	9781119523543
Qualifying information	electronic book
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
Canceled/invalid ISBN	9781119523536
Qualifying information	print
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
Canceled/invalid ISBN	9781119523512
Qualifying information	electronic book
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
Canceled/invalid ISBN	1119523516
Qualifying information	electronic book
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
Canceled/invalid ISBN	1119523540
Qualifying information	electronic book
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
Canceled/invalid ISBN	1119523532
024 7# - OTHER STANDARD IDENTIFIER
Standard number or code	10.1002/9781119523543
Source of number or code	doi
035 ## - SYSTEM CONTROL NUMBER
System control number	(CaBNVSL)mat08671409
035 ## - SYSTEM CONTROL NUMBER
System control number	(IDAMS)0b00006488ddff20
040 ## - CATALOGING SOURCE
Original cataloging agency	CaBNVSL
Language of cataloging	eng
Description conventions	rda
Transcribing agency	CaBNVSL
Modifying agency	CaBNVSL
082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER
Classification number	621.3815/284
100 1# - MAIN ENTRY--PERSONAL NAME
Personal name	Sahay, Shubham,
Relator term	author.
245 10 - TITLE STATEMENT
Title	Junctionless Field-Effect Transistors :
Remainder of title	Design, Modeling, and Simulation /
Statement of responsibility, etc.	Shubham Sahay, Mamidala Jagadesh Kumar.
264 #1 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE
Place of production, publication, distribution, manufacture	Hoboken, New Jersey :
Name of producer, publisher, distributor, manufacturer	John Wiley & Sons Inc.,
Date of production, publication, distribution, manufacture, or copyright notice	[2019]
264 #2 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE
Place of production, publication, distribution, manufacture	[Piscataqay, New Jersey] :
Name of producer, publisher, distributor, manufacturer	IEEE Xplore,
Date of production, publication, distribution, manufacture, or copyright notice	[2019]
300 ## - PHYSICAL DESCRIPTION
Extent	1 PDF (496 pages).
336 ## - CONTENT TYPE
Content type term	text
Source	rdacontent
337 ## - MEDIA TYPE
Media type term	electronic
Source	isbdmedia
338 ## - CARRIER TYPE
Carrier type term	online resource
Source	rdacarrier
490 1# - SERIES STATEMENT
Series statement	IEEE Press series on microelectronic systems
504 ## - BIBLIOGRAPHY, ETC. NOTE
Bibliography, etc. note	Includes bibliographical references and index.
505 0# - FORMATTED CONTENTS NOTE
Formatted contents note	Preface xi -- 1 Introduction to Field-Effect Transistors 1 -- 1.1 Transistor Action 2 -- 1.2 Metal-Oxide-Semiconductor Field-Effect Transistors 4 -- 1.3 MOSFET Circuits: The Need for Complementary MOS 9 -- 1.4 The Need for CMOS Scaling 11 -- 1.5 Moore’s Law 13 -- 1.6 Koomey’s Law 13 -- 1.7 Challenges in Scaling the MOSFET 13 -- 1.8 Conclusion 23 -- References 23 -- 2 Emerging FET Architectures 27 -- 2.1 Tunnel FETs 28 -- 2.2 Impact Ionization MOSFET 34 -- 2.3 Bipolar I-MOS 39 -- 2.4 Negative Capacitance FETs 41 -- 2.5 Two-Dimensional FETs 46 -- 2.6 Nanowire FETs 49 -- 2.7 Nanotube FETs 51 -- 2.8 Conclusion 57 -- References 58 -- 3 Fundamentals of Junctionless Field-Effect Transistors 67 -- 3.1 Device Structure 69 -- 3.2 Operation 70 -- 3.3 Design Parameters 80 -- 3.4 Parameters that Affect the Performance 82 -- 3.5 Beyond Silicon JLFETS: Other Materials 100 -- 3.6 Challenges 103 -- 3.7 Conclusion 110 -- References 111 -- 4 Device Architectures to Mitigate Challenges in Junctionless Field-Effect Transistors 125 -- 4.1 Junctionless Accumulation-Mode Field-Effect Transistors 126 -- 4.2 Realizing Efficient Volume Depletion 129 -- 4.3 SOI JLFET with a High-𝜅 Box 131 -- 4.4 Bulk Planar JLFET 137 -- 4.5 JLFET with a Nonuniform Doping 140 -- 4.6 JLFET with a Step Doping Profile 144 -- 4.7 Multigate JLFET 149 -- 4.8 JLFET with a High-𝜅 Spacer 153 -- 4.9 JLFET with a Dual Material Gate 157 -- 4.10 Conclusion 162 -- References 162 -- 5 Gate-Induced Drain Leakage in Junctionless Field-Effect Transistors 173 -- 5.1 Hole Accumulation 174 -- 5.2 Parasitic BJT Action 176 -- 5.3 Impact of BTBT-Induced Parasitic BJT Action on Scaling 177 -- 5.4 Impact of Silicon Film Thickness on GIDL 179 -- 5.5 Impact of Doping on GIDL 187 -- 5.6 Impact of Spacer Design on GIDL 189 -- 5.7 Nature of GIDL in Different NWFET Configurations 190 -- 5.8 Device Architectures to Mitigate GIDL 199 -- 5.9 Conclusion 248 -- References 249 -- 6 Impact Ionization in Junctionless Field-Effect Transistors 255.
505 8# - FORMATTED CONTENTS NOTE
Formatted contents note	6.1 Impact Ionization 256 -- 6.2 Floating Body Effects in Silicon-on-Insulator MOSFETs 256 -- 6.3 Nature of Impact Ionization in JLFETs 260 -- 6.4 Zero Gate Oxide Thickness Coefficient 263 -- 6.5 Single Transistor Latch-Up in JLFETs 266 -- 6.6 Impact of Body Bias on Impact Ionization in JLFETs 267 -- 6.7 Subband Gap Impact Ionization in DGJLFETS with Asymmetric Operation 268 -- 6.8 Impact of Gate Misalignment on Impact Ionization in DGJLFETs 270 -- 6.9 Spacer Design Guideline from Impact Ionization Perspective 272 -- 6.10 Hysteresis and Snapback in JLFETs 273 -- 6.11 Impact of Heavy-Ion Irradiation on JLFETs 275 -- 6.12 Conclusions 276 -- References 276 -- 7 Junctionless Devices Without Any Chemical Doping 281 -- 7.1 Charge Plasma Doping 282 -- 7.2 Charge Plasma Based p-n Diode 283 -- 7.3 Junctionless I-MOS FET 288 -- 7.4 Junctionless Tunnel FETs 290 -- 7.5 JLTFET on a Highly Doped Silicon Film 294 -- 7.6 Bipolar Enhanced JLTFET 294 -- 7.7 Junctionless FETS Without Any Chemical Doping 297 -- 7.8 Challenges for CPJLFETs 302 -- 7.9 Electrostatic Doping Based FETs 312 -- 7.10 Conclusions 319 -- References 319 -- 8 Modeling Junctionless Field-Effect Transistors 327 -- 8.1 Introduction to FET Modeling 328 -- 8.2 Surface Potential Modeling of JLFETs 330 -- 8.3 Charge-Based Modeling Approach 351 -- 8.4 Drain Current Modeling Approach 355 -- 8.5 Modeling Short-Channel JLFETs 365 -- 8.6 Modeling Quantum Confinement 372 -- 8.7 Conclusion 379 -- References 379 -- 9 Simulation of JLFETS Using Sentaurus TCAD 385 -- 9.1 Introduction to TCAD 386 -- 9.2 Tool Flow 387 -- 9.3 Sample Input Deck for Long-Channel JLFETS 391 -- 9.4 Model Calibration 407 -- 9.5 Model Calibration for Short-Channel JLFETs 409 -- 9.6 Model Calibration for NWFETS 422 -- References 436 -- 10 Conclusion and Perspectives 439 -- 10.1 JLFETS As a Label-Free Biosensor 441 -- 10.2 JLFETS As Capacitorless DRAM 443 -- 10.3 Nanowire Junctionless NAND Flash Memory 444 -- 10.4 Junctionless Polysilicon TFTS with a Hybrid Channel 447.
505 8# - FORMATTED CONTENTS NOTE
Formatted contents note	10.5 JLFETS for 3D Integrated Circuits 449 -- 10.6 Summary 450 -- References 451 -- Index 457.
506 ## - RESTRICTIONS ON ACCESS NOTE
Terms governing access	Restricted to subscribers or individual electronic text purchasers.
520 ## - SUMMARY, ETC.
Summary, etc.	A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution-many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop reference on the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: -Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET -Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation -Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs -Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.
530 ## - ADDITIONAL PHYSICAL FORM AVAILABLE NOTE
Additional physical form available note	Also available in print.
538 ## - SYSTEM DETAILS NOTE
System details note	Mode of access: World Wide Web
588 0# - SOURCE OF DESCRIPTION NOTE
Source of description note	Online resource; title from digital title page (viewed on March 20, 2019).
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element	Metal semiconductor field-effect transistors.
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element	Metal semiconductor field-effect transistors.
Source of heading or term	fast
655 #4 - INDEX TERM--GENRE/FORM
Genre/form data or focus term	Electronic books.
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name	Kumar, Mamidala Jagadesh,
Relator term	author.
710 2# - ADDED ENTRY--CORPORATE NAME
Corporate name or jurisdiction name as entry element	IEEE Xplore (Online Service),
Relator term	distributor.
710 2# - ADDED ENTRY--CORPORATE NAME
Corporate name or jurisdiction name as entry element	Wiley,
Relator term	publisher.
776 08 - ADDITIONAL PHYSICAL FORM ENTRY
Relationship information	Print version:
International Standard Book Number	1119523532
--	9781119523536
Record control number	(OCoLC)1039924256
830 #0 - SERIES ADDED ENTRY--UNIFORM TITLE
Uniform title	IEEE Press series on microelectronic systems.
856 42 - ELECTRONIC LOCATION AND ACCESS
Materials specified	Abstract with links to resource
Uniform Resource Identifier	<a href="https://ieeexplore.ieee.org/xpl/bkabstractplus.jsp?bkn=8671409">https://ieeexplore.ieee.org/xpl/bkabstractplus.jsp?bkn=8671409</a>

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