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Introduction to magnetic random-access memory / (Record no. 40749)

MARC details
000 -LEADER
fixed length control field	05134nam a2200937 i 4500
001 - CONTROL NUMBER
control field	7794169
003 - CONTROL NUMBER IDENTIFIER
control field	IEEE
005 - DATE AND TIME OF LATEST TRANSACTION
control field	20230927112359.0
006 - FIXED-LENGTH DATA ELEMENTS--ADDITIONAL MATERIAL CHARACTERISTICS
fixed length control field	m o d
007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION
fixed length control field	cr \|n\|\|\|\|\|\|\|\|\|
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field	170118s2017 nju ob 001 eng d
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number	9781119079415
Qualifying information	electronic bk.
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
Canceled/invalid ISBN	9781119009740
Qualifying information	print
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
Canceled/invalid ISBN	1119079411
Qualifying information	electronic bk.
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
Canceled/invalid ISBN	9781119079354
Qualifying information	electronic bk.
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
Canceled/invalid ISBN	1119079357
Qualifying information	electronic bk.
024 7# - OTHER STANDARD IDENTIFIER
Standard number or code	10.1002/9781119079415
Source of number or code	doi
035 ## - SYSTEM CONTROL NUMBER
System control number	(CaBNVSL)mat07794169
035 ## - SYSTEM CONTROL NUMBER
System control number	(IDAMS)0b000064859d933b
040 ## - CATALOGING SOURCE
Original cataloging agency	CaBNVSL
Language of cataloging	eng
Description conventions	rda
Transcribing agency	CaBNVSL
Modifying agency	CaBNVSL
082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER
Classification number	004.5/3
245 00 - TITLE STATEMENT
Title	Introduction to magnetic random-access memory /
Statement of responsibility, etc.	edited by Bernard Dieny, Ronald B. Goldfarb, Kyung-Jin Lee.
264 #1 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE
Place of production, publication, distribution, manufacture	Hoboken, New Jersey :
Name of producer, publisher, distributor, manufacturer	Wiley-IEEE Press,
Date of production, publication, distribution, manufacture, or copyright notice	[2017]
264 #2 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE
Place of production, publication, distribution, manufacture	[Piscataqay, New Jersey] :
Name of producer, publisher, distributor, manufacturer	IEEE Xplore,
Date of production, publication, distribution, manufacture, or copyright notice	[2017]
300 ## - PHYSICAL DESCRIPTION
Extent	1 PDF (264 pages).
336 ## - CONTENT TYPE
Content type term	text
Source	rdacontent
337 ## - MEDIA TYPE
Media type term	electronic
Source	isbdmedia
338 ## - CARRIER TYPE
Carrier type term	online resource
Source	rdacarrier
504 ## - BIBLIOGRAPHY, ETC. NOTE
Bibliography, etc. note	Includes bibliographical references and index.
505 0# - FORMATTED CONTENTS NOTE
Formatted contents note	Basic Spintronic Transport Phenomena / Nicolas Locatelli, Vincent Cros -- Magnetic Properties of Materials for MRAM / Shinji Yuasa -- Micromagnetism Applied to Magnetic Nanostructures / Liliana D Buda-Prejbeanu -- Magnetization Dynamics / William E Bailey -- Magnetic Random-Access Memory / Bernard Dieny, I Lucian Prejbeanu -- Magnetic Back-End Technology / Michael C Gaidis -- Beyond MRAM: Nonvolatile Logic-in-Memory VLSI / Takahiro Hanyu, Tetsuo Endoh, Shoji Ikeda, Tadahiko Sugibayashi, Naoki Kasai, Daisuke Suzuki, Masanori Natsui, Hiroki Koike, Hideo Ohno -- Appendix: Units for Magnetic Properties.
506 1# - RESTRICTIONS ON ACCESS NOTE
Terms governing access	Restricted to subscribers or individual electronic text purchasers.
520 ## - SUMMARY, ETC.
Summary, etc.	Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, low energy dissipation, fast switching speed, radiation hardness, and durability. Although toggle-MRAM is currently a commercial product, it is clear that future developments in MRAM will be based on spin-transfer torque, which makes use of electrons' spin angular momentum instead of their charge. MRAM will require an amalgamation of magnetics and microelectronics technologies. However, researchers and developers in magnetics and in microelectronics attend different technical conferences, publish in different journals, use different tools, and have different backgrounds in condensed-matter physics, electrical engineering, and materials science. This book is an introduction to MRAM for microelectronics engineers written by specialists in magnetic materials and devices. It presents the basic phenomena involved in MRAM, the materials and film stacks being used, the basic principles of the various types of MRAM (toggle and spin-transfer torque; magnetized in-plane or perpendicular-to-plane), the back-end magnetic technology, and recent developments toward logic-in-memory architectures. It helps bridge the cultural gap between the microelectronics and magnetics communities.
530 ## - ADDITIONAL PHYSICAL FORM AVAILABLE NOTE
Additional physical form available note	Also available in print.
538 ## - SYSTEM DETAILS NOTE
System details note	Mode of access: World Wide Web
588 ## - SOURCE OF DESCRIPTION NOTE
Source of description note	Online resource; title from PDF title page (John Wiley, viewed December 13, 2016).
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element	Random access memory.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element	Magnetic memory (Computers)
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element	Magnetic memory (Computers)
Source of heading or term	fast
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element	Random access memory.
Source of heading or term	fast
655 #4 - INDEX TERM--GENRE/FORM
Genre/form data or focus term	Electronic books.
695 ## -
--	Amorphous magnetic materials
695 ## -
--	CMOS technology
695 ## -
--	Computer architecture
695 ## -
--	Damping
695 ## -
--	Demagnetization
695 ## -
--	Fabrication
695 ## -
--	Magnetic domain walls
695 ## -
--	Magnetic domains
695 ## -
--	Magnetic hysteresis
695 ## -
--	Magnetic materials
695 ## -
--	Magnetic moments
695 ## -
--	Magnetic multilayers
695 ## -
--	Magnetic recording
695 ## -
--	Magnetic resonance imaging
695 ## -
--	Magnetic tunneling
695 ## -
--	Magnetization
695 ## -
--	Magnetomechanical effects
695 ## -
--	Magnetostatics
695 ## -
--	Memory management
695 ## -
--	Metals
695 ## -
--	Nonvolatile memory
695 ## -
--	Perpendicular magnetic anisotropy
695 ## -
--	Power supplies
695 ## -
--	Random access memory
695 ## -
--	Saturation magnetization
695 ## -
--	Silicon
695 ## -
--	Standards
695 ## -
--	Switches
695 ## -
--	Torque
695 ## -
--	Transistors
695 ## -
--	Very large scale integration
695 ## -
--	Wiring
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name	Dieny, B.
Fuller form of name	(Bernard),
Relator term	editor.
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name	Goldfarb, Ronald Barry,
Relator term	editor.
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name	Lee, Kyung-Jin,
Relator term	editor.
710 2# - ADDED ENTRY--CORPORATE NAME
Corporate name or jurisdiction name as entry element	IEEE Xplore (Online Service),
Relator term	distributor.
710 2# - ADDED ENTRY--CORPORATE NAME
Corporate name or jurisdiction name as entry element	Wiley,
Relator term	publisher.
776 08 - ADDITIONAL PHYSICAL FORM ENTRY
Relationship information	Print version:
International Standard Book Number	9781119009740
856 42 - ELECTRONIC LOCATION AND ACCESS
Materials specified	Abstract with links to resource
Uniform Resource Identifier	<a href="https://ieeexplore.ieee.org/xpl/bkabstractplus.jsp?bkn=7794169">https://ieeexplore.ieee.org/xpl/bkabstractplus.jsp?bkn=7794169</a>

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