NAND flash memory technologies / (Record no. 40697)

MARC details
000 -LEADER
fixed length control field 04353nam a2200673 i 4500
001 - CONTROL NUMBER
control field 7394658
003 - CONTROL NUMBER IDENTIFIER
control field IEEE
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20230927112358.0
006 - FIXED-LENGTH DATA ELEMENTS--ADDITIONAL MATERIAL CHARACTERISTICS
fixed length control field m o d
007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION
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008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 160307s2008 njua ob 001 eng d
019 ## -
-- 932097299
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9781119132639
Qualifying information electronic bk.
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
Canceled/invalid ISBN 9781119132608
Qualifying information print
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
Canceled/invalid ISBN 9781119132615
Qualifying information electronic bk.
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
Canceled/invalid ISBN 1119132614
Qualifying information electronic bk.
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
Canceled/invalid ISBN 9781119132622
Qualifying information electronic bk.
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
Canceled/invalid ISBN 1119132622
Qualifying information electronic bk.
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
Canceled/invalid ISBN 1119132630
Qualifying information electronic bk.
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
Canceled/invalid ISBN 1119132606
024 7# - OTHER STANDARD IDENTIFIER
Standard number or code 10.1002/9781119132639
Source of number or code doi
035 ## - SYSTEM CONTROL NUMBER
System control number (CaBNVSL)mat07394658
035 ## - SYSTEM CONTROL NUMBER
System control number (IDAMS)0b00006484bd885f
040 ## - CATALOGING SOURCE
Original cataloging agency CaBNVSL
Language of cataloging eng
Description conventions rda
Transcribing agency CaBNVSL
Modifying agency CaBNVSL
082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER
Classification number 004.5
100 1# - MAIN ENTRY--PERSONAL NAME
Personal name Aritome, Seiichi,
Relator term author.
245 10 - TITLE STATEMENT
Title NAND flash memory technologies /
Statement of responsibility, etc. Seiichi Aritome.
264 #1 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE
Place of production, publication, distribution, manufacture Hoboken, New Jersey :
Name of producer, publisher, distributor, manufacturer Wiley,
Date of production, publication, distribution, manufacture, or copyright notice [2016]
264 #2 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE
Place of production, publication, distribution, manufacture [Piscataqay, New Jersey] :
Name of producer, publisher, distributor, manufacturer IEEE Xplore,
Date of production, publication, distribution, manufacture, or copyright notice [2015]
300 ## - PHYSICAL DESCRIPTION
Extent 1 PDF (xx, 410 pages) :
Other physical details illustrations.
336 ## - CONTENT TYPE
Content type term text
Source rdacontent
337 ## - MEDIA TYPE
Media type term electronic
Source isbdmedia
338 ## - CARRIER TYPE
Carrier type term online resource
Source rdacarrier
490 1# - SERIES STATEMENT
Series statement IEEE press series on microelectronic systems
504 ## - BIBLIOGRAPHY, ETC. NOTE
Bibliography, etc. note Includes bibliographical references and index.
505 0# - FORMATTED CONTENTS NOTE
Formatted contents note Principle of NAND flash memory -- NAND flash memory devices -- Advanced operation for multilevel cell -- Scaling challenge of NAND flash memory cells -- Reliability of NAND flash memory -- Three-dimensional NAND flash cell -- Challenges of NAND flash memory.
506 1# - RESTRICTIONS ON ACCESS NOTE
Terms governing access Restricted to subscribers or individual electronic text purchasers.
520 ## - SUMMARY, ETC.
Summary, etc. Examines the history, basic structure, and processes of NAND flash memory This book discusses basic and advanced NAND flash memory technologies, including the principle of NAND flash, memory cell technologies, multi-bits cell technologies, scaling challenges of memory cell, reliability, and 3-dimensional cell as the future technology. Chapter 1 describes the background and early history of NAND flash. The basic device structures and operations are described in Chapter 2. Next, the author discusses the memory cell technologies focused on scaling in Chapter 3, and introduces the advanced operations for multi-level cells in Chapter 4. The physical limitations for scaling are examined in Chapter 5, and Chapter 6 describes the reliability of NAND flash memory. Chapter 7 examines 3-dimensional (3D) NAND flash memory cells and discusses the pros and cons in structure, process, operations, scalability, and performance. In Chapter 8, challenges of 3D NAND flash memory are discussed. Finally, in Chapter 9, the author summarizes and describes the prospect of technologies and market for the future NAND flash memory. . Offers a comprehensive overview of NAND flash memories, with insights into NAND history, technology, challenges, evolutions, and perspectives. Describes new program disturb issues, data retention, power consumption, and possible solutions for the challenges of 3D NAND flash memory . Written by an authority in NAND flash memory technology, with over 25 years' experience NAND Flash Memory Technologies is a reference for engineers, researchers, and designers who are engaged in the development of NAND flash memory or SSD (Solid State Disk) and flash memory systems.
530 ## - ADDITIONAL PHYSICAL FORM AVAILABLE NOTE
Additional physical form available note Also available in print.
538 ## - SYSTEM DETAILS NOTE
System details note Mode of access: World Wide Web
588 0# - SOURCE OF DESCRIPTION NOTE
Source of description note Online resource; title from PDF title page (EBSCO, viewed December 22, 2015)
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Flash memories (Computers)
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Computer storage devices.
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Computer storage devices.
Source of heading or term fast
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Flash memories (Computers)
Source of heading or term fast
655 #4 - INDEX TERM--GENRE/FORM
Genre/form data or focus term Electronic books.
695 ## -
-- Epitaxial layers
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-- Excitons
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-- Nitrogen
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-- Radiative recombination
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-- Silicon carbide
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-- Temperature measurement
710 2# - ADDED ENTRY--CORPORATE NAME
Corporate name or jurisdiction name as entry element IEEE Xplore (Online Service),
Relator term distributor.
710 2# - ADDED ENTRY--CORPORATE NAME
Corporate name or jurisdiction name as entry element Wiley,
Relator term publisher.
776 08 - ADDITIONAL PHYSICAL FORM ENTRY
Relationship information Print version:
International Standard Book Number 1119132606
-- 9781119132608
Record control number (OCoLC)911171852
830 #0 - SERIES ADDED ENTRY--UNIFORM TITLE
Uniform title IEEE Press series on microelectronic systems.
856 42 - ELECTRONIC LOCATION AND ACCESS
Materials specified Abstract with links to resource
Uniform Resource Identifier <a href="https://ieeexplore.ieee.org/xpl/bkabstractplus.jsp?bkn=7394658">https://ieeexplore.ieee.org/xpl/bkabstractplus.jsp?bkn=7394658</a>

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